Epitaxial hexagonal boron nitride with high quantum efficiency
نویسندگان
چکیده
Two-dimensional (2D) hexagonal boron nitride (h-BN) is one of the few materials showing great promise for light emission in far ultraviolet (UV)-C wavelength, which more effective and safer containing transmission microbial diseases than traditional UV light. In this report, we observed that h-BN, despite having an indirect energy bandgap, exhibits a remarkably high room-temperature quantum efficiency (∼60%), orders magnitude higher other bandgap material, enabled by strong excitonic effects efficient exciton-phonon interactions. This study offers new approach design development UV-C optoelectronic devices as well photonic employing 2D semiconductor active regions.
منابع مشابه
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ژورنال
عنوان ژورنال: APL Materials
سال: 2023
ISSN: ['2166-532X']
DOI: https://doi.org/10.1063/5.0142242